PART |
Description |
Maker |
IDW10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
GNT60 GNT60-12 GNT60-15 GNT60-18 GNT60-24 GNT60-48 |
GNT60-X-YYYG, where X = 12, 15, 18, 24 or 48 which represents the output voltage rating, -YYY is value added options not related to Safety and G represents ROHS Compliance
|
SL Power Electronics
|
IDH12SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDC05S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDD06SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH06S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDB06S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDT10S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
IDH05SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDD05SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDV02S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|